2008 -06-02 rev. 1.5 page 1 SDP10S30 sdt10s30 thinq! sic schottky diode silicon carbide schottky diode ? revolutionary semiconductor material - silicon carbide ? switching behavior benchmark ? no reverse recovery ? no temperature influence on the switching behavior ? no forward recovery product summary v rrm 300 v q c 23 nc i f 10 a p g -to220-2-2. p-to220 pin 1 pin 2 n.c. c type package ordering code SDP10S30 p-to220-3 q67040-s4372 sdt10s30 p g -to220-2-2. q67040-s4447 pin 3 a marking d10s30 d10s30 c a maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous forward current, t c =100c i f 10 a rms forward current , f =50 hz i frms 14 surge non repetitive forward current, sine halfwave t c =25c, t p =10ms i fsm 36 repetitive peak forward current t j =150c, t c =100c, d =0.1 i frm 45 non repetitive peak forward current t p =10s, t c =25c i fmax 100 i 2 t value , t c =25c, t p =10ms 3 i 2 d t 6.5 a2s repetitive peak reverse voltage v rrm 300 v surge peak reverse voltage v rsm 300 power dissipation , t c =25c p tot 65 w operating and storage temperature t j , t stg -55... +175 c
2008-06-02 rev. 1.5 page 2 SDP10S30 sdt10s30 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc 2 / lectrical characteristics , at t j 2 c, unless otherwise specified parameter smol alues nit min tp ma static characteristics diode forward voltage i f , j 2c i f , t j c v f reverse current v r , t j 2c v r , t j c i r 2 2 device on mmmmmm epo pc fr with cm one laer, m thick copper area for drain connection pc is vertical without lown air
2008-06-02 rev. 1.5 page 3 SDP10S30 sdt10s30 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics total capacitive charge 1) v r =200v, i f =10a, d i f /d t =-200a/s, t j =150c q c - 23 - nc switching time 2) v r =200v, i f =10a, d i f /d t =-200a/s, t j =150c t rr - n.a. - ns total capacitance v r =0v, t c =25c, f =1mhz v r =150v, t c =25c, f =1mhz v r =300v, t c =25c, f =1mhz c - - - 600 55 40 - - - pf
2008-06-02 rev. 1.5 page 4 SDP10S30 sdt10s30 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 c 180 t c 0 5 10 15 20 25 30 35 40 45 50 55 60 w 70 p tot 2 diode forward current i f = f ( t c ) parameter: t j 175 c 0 20 40 60 80 100 120 140 c 180 t c 0 1 2 3 4 5 6 7 8 9 a 11 i f 4 typ. forward power dissipation vs. average forward current p f(av) = f ( i f ) t c =100c, d = t p / t 0 2 4 6 8 10 12 14 a 18 i f(av) 0 4 8 12 16 20 24 w 32 p f(av) d=1 d=0.5 d=0.2 d=0.1 3 typ. forward characteristic i f = f ( v f ) parameter: t j , t p = 350 s 0.6 0.8 1 1.2 1.4 1.6 1.8 v 2.2 v f 0 2 4 6 8 10 12 14 16 a 20 i f -40c 25c 100c 125c 150c
2008 -06-02 rev. 1.5 page 5 SDP10S30 sdt10s30 5 typ. reverse current vs. reverse voltage i r f v r 2 v r 2 2 i r c 2c c 2c ransient thermal impedance thjc f t p parameter d t p / 2 s t p 2 / sdps thjc single pulse 2 2 d p capacitance vs reverse voltage c f v r parameter t c 2 c, f v v r 2 2 pf c p c stored energ c f v r 2 v r j 2 c
2008 -06-02 rev. 1.5 page 6 SDP10S30 sdt10s30 9 typ. capacitive charge vs. current slop e q c = f ( d i f /d t ) parameter: t j = 150 c 100 200 300 400 500 600 700 800 a/s 1000 d i f /d t 0 2 4 6 8 10 12 14 16 18 nc 22 q c i f *0.5 i f i f *2
2008-06-02 rev. 1.5 page 7 SDP10S30 sdt10s30 p-to220-3-1, p-to220-3-21
2008-06-02 rev. 1.5 page 8 SDP10S30 sdt10s30 pg-to-220-2-2
2008-06-02 rev. 1.5 page 9 SDP10S30 sdt10s30
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